? 2008 ixys corporation, all rights reserved genx3 tm 600v igbt with diode symbol test conditions maximum ratings v ces t c = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 60 a i c110 t c = 110c 30 a i cm t c = 25c, 1ms 150 a ssoa v ge = 15v, t vj = 125c, r g = 5 i cm = 60 a (rbsoa) clamped inductive load @ 600v p c t c = 25c 220 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220) 1.13/10 nm/lb.in. weight to-220 2.5 g to-263 3.0 g ds100073(11/08) g = gate c = collector e = emitter tab = collector symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 3.5 5.5 v i ces v ce = v ces 75 a v ge = 0v t j = 125c 500 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 20a, v ge = 15v, note 1 2.6 3.0 v t j = 125c 1.8 v v ces = 600v i c110 = 30a v ce(sat) 3.0v t fi(typ) = 47ns high speed pt igbts for 40-100khz switching features optimized for low switching losses square rbsoa anti-parallel ultra fast diode international standard packages advantages high power density low gate drive requirement applications high frequency power inverters ups motor drives smps pfc circuits battery chargers welding machines lamp ballasts IXGA30N60C3D4 ixgp30n60c3d4 preliminary technical information c(tab) to-263 (ixga) g e c(tab) to-220 (ixgp) g e c
ixys reserves the right to change limits, test conditions and dimensions. IXGA30N60C3D4 ixgp30n60c3d4 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 20a, v ce = 10v, note 1 9 16 s c ies 915 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 78 pf c res 32 pf q g 38 nc q ge i c = 20a, v ge = 15v, v ce = 0.5 ? v ces 8 nc q gc 17 nc t d(on) 16 ns t ri 26 ns e on 0.27 mj t d(off) 42 75 ns t fi 47 ns e off 0.09 0.18 mj t d(on) 17 ns t ri 28 ns e on 0.44 mj t d(off) 70 ns t fi 90 ns e off 0.33 mj r thjc 0.56 c/w r thcs to-220 0.50 c/w note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 inductive load, t j = 25c i c = 20a, v ge = 15v v ce = 300v, r g = 5 inductive load, t j = 125c i c = 20a, v ge = 15v v ce = 300v, r g = 5 pins: 1 - gate 2 - drain 3 - source 4 - drain to-220 (ixgp) outline to-263 (ixga) outline preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. reverse diode (fred) symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v f i f = 10a, v ge = 0v, note 1 3.0 v t j = 150c 1.7 v t rr 60 ns i rm 3 a 4 a r thjc 2.5 c/w i f = 10a, -di f /dt = 200a/ s v r = 300v t j = 100c t j = 25c t j = 100c
? 2008 ixys corporation, all rights reserved fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 v ce - volts i c - amperes v ge = 15 v 13 v 7v 9v 11v fig. 2. extended output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 0 2 4 6 8 10 12 14 16 18 20 v ce - volts i c - amperes v ge = 15v 7v 9v 11v 13v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v ce - volts i c - amperes v ge = 15 v 13 v 11 v 7v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.5 0.6 0.7 0.8 0.9 1.0 1.1 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 40a i c = 20a i c = 10a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2.5 3.0 3.5 4.0 4.5 5.0 5.5 7 8 9 101112131415 v ge - volts v ce - volts i c = 40 a 20 a 10 a t j = 25oc fig. 6. input admittance 0 10 20 30 40 50 60 70 567891011 v ge - volts i c - amperes t j = 125oc 25oc - 40oc IXGA30N60C3D4 ixgp30n60c3d4
ixys reserves the right to change limits, test conditions and dimensions. IXGA30N60C3D4 ixgp30n60c3d4 fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. transconductance 0 2 4 6 8 10 12 14 16 18 20 22 24 0 1020304050607080 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 100 200 300 400 500 600 v ce - volts i c - amperes t j = 125oc r g = 5 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 q g - nanocoulombs v ge - volts v ce = 300v i c = 20a i g = 10 ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res ixys ref: g_30n60c3(4d)7-25-08
? 2008 ixys corporation, all rights reserved fig. 12. inductive switching energy loss vs. gate resistance 0.2 0.3 0.4 0.5 0.6 0.7 0.8 4 6 8 101214161820 r g - ohms e off - millijoules 0.2 0.4 0.6 0.8 1.0 1.2 1.4 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 300v i c = 40a i c = 20a fig. 17. inductive turn-off switching times vs. junction temperature 20 40 60 80 100 120 140 160 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 20 30 40 50 60 70 80 90 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 300v i c = 40a, 20a fig. 15. inductive turn-off switching times vs. gate resistance 80 90 100 110 120 130 140 150 160 170 180 4 6 8 10 12 14 16 18 20 r g - ohms t f - nanoseconds 40 50 60 70 80 90 100 110 120 130 140 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 300v i c = 40a i c = 20a fig. 13. inductive switching energy loss vs. collector current 0.0 0.1 0.2 0.3 0.4 0.5 0.6 10 15 20 25 30 35 40 i c - amperes e off - millijoules 0.0 0.2 0.4 0.6 0.8 1.0 1.2 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 300v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 300v i c = 40a i c = 20a fig. 16. inductive turn-off switching times vs. collector current 0 20 40 60 80 100 120 140 160 180 10 15 20 25 30 35 40 i c - amperes t f - nanoseconds 20 30 40 50 60 70 80 90 100 110 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 300v t j = 125oc t j = 25oc IXGA30N60C3D4 ixgp30n60c3d4
ixys reserves the right to change limits, test conditions and dimensions. IXGA30N60C3D4 ixgp30n60c3d4 ixys ref: g_30n60c3(4d) 7-25-08 fig. 19. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 70 10 15 20 25 30 35 40 i c - amperes t r - nanoseconds 10 12 14 16 18 20 22 24 t d(on) - nanoseconds t r t d(on) - - - - r g = 5 ? fig. 20. inductive turn-on switching times vs. junction temperature 15 20 25 30 35 40 45 50 55 60 65 70 75 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 15 16 17 18 19 20 21 t d(on) - nanoseconds t r t d(on) - - - - r g = 5 ? fig. 18. inductive turn-on switching times vs. gate resistance 10 20 30 40 50 60 70 80 90 4 6 8 101214161820 r g - ohms t r - nanoseconds 14 16 18 20 22 24 26 28 30 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 300v i c = 20a i c = 40a
? 2008 ixys corporation, all rights reserved IXGA30N60C3D4 ixgp30n60c3d4 fig. 23. peak reverse current i rm fig. 22. reverse recovery charge q r fig. 21. forward current i f versus v f fig. 24. dynamic parameters q r , i rm fig. 25. recovery time t rr versus -di f /dt fig. 26. peak forward voltage v fr and fig. 27. transient thermal resistance junction-to-case constants for z thjc calculation: i r thi (k/w) t i (s) 1 1.449 0.0052 2 0.5578 0.0003 note: fig. 2 to fig. 6 shows typical values 200 600 1000 0 400 800 40 60 80 100 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 20 40 60 0.0 0.1 0.2 0.3 v fr di f /dt v 200 600 1000 0 400 800 0 2 4 6 8 10 100 1000 0 50 100 150 200 250 0123 0 5 10 15 20 25 30 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr z thjc a/ s s t vj = 150c t vj = 100c t vj = 25c i rm q r v fr t vj = 100c v r = 300 v t vj = 100c v r = 300 v t vj = 100c v r = 300 v dsep 8-06b t fr i f = 5 a i f = 10 a i f = 20 a i f = 5 a i f = 10 a i f = 20 a i f = 5 a i f = 10 a i f = 20 a t vj = 100c i f = 10 a
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